2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
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International Conference on Solid State Devices and Materials
2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan

[A-2-2]Modeling and Analysis of Gate Line Edge Roughness Effect on CMOS Scaling Towards Deep Nanoscale Gate Length

Seong-Dong Kim、Sungkwon Hong、Jae-Kwan Park、Jason C. S. Woo(1.Department of Electrical Engineering, University of California)
https://doi.org/10.7567/SSDM.2002.A-2-2
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