2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
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International Conference on Solid State Devices and Materials
2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan

[B-1-5]A Theoretical Study of SiO2-rich Zr and Hf Silicates as High-k Gate Insulators

Tomoyuki Hamada、Takuya Maruizumi、Yuuichi Matsui、Masahiko Hiratani(1.Advanced Research Laboratory, Hitachi Ltd.、2.Central Research Laboratory, Hitachi, Ltd.)
https://doi.org/10.7567/SSDM.2002.B-1-5
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