2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
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International Conference on Solid State Devices and Materials
2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan

[C-2-2]Ultrathin Zr Silicate Gate Dielectrics with Compositional Gradation

Heiji Watanabe(1.Silicon Systems Research Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.2002.C-2-2
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