2002 International Conference on Solid State Devices and Materials
2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
2002 International Conference on Solid State Devices and Materials
2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
[D-1-4]Elevated Source/Drain Engineering with 0.22-nm-Rms Smooth Surface Morphology for 90-nm-node Ultrathin-SOI CMOS
K. Sugihara、T. Nakahata、T. Matsumoto、S. Maeda、S. Maegawa、K. Ota、H. Sayama、H. Oda、T. Eimori、Y. Abe、T. Ozeki、Y. Inoue、T. Nishimura(1.Advanced Technology R&D Center, Mitsubishi Electric Corporation、2.ULSI Development Center, Mitsubishi Electric Corporation)
