2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
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International Conference on Solid State Devices and Materials
2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan

[D-2-3]Highly Stable Etch Stopper Technology for 0.25 μm 1T1C 32Mb FRAM

N. W. Jang、Y. J. Song、S. H. Joo、K. M. Lee、H. H. Kim、H. J. Joo、J. H. Park、S. W. Lee、S. Y. Lee、Kinam Kim(1.Advanced Technology Development Team, R&D Center, Memory Devices, Samsung Electronics Co. Ltd.)
https://doi.org/10.7567/SSDM.2002.D-2-3
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