2002 International Conference on Solid State Devices and Materials
2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
2002 International Conference on Solid State Devices and Materials
2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
[D-2-4]New multi layer top electrode of SRO/IrOx for 0.35μm FRAM
Yoshimasa Horii、Jeffrey S. Cross、Naoyuki Sato、Soichiro Ozawa、Katsuyoshi Matsuura、Mitsushi Fujiki、Takeyasu Saito、Satoru Mihara、Takashi Eshita、Shan Sun、Fun Chu、Glen Fox、Rick Baily、Tom Davenport、Tatsuya Yamazaki(1.Fujitsu Limited, FRAM Development Department、2.Fujitsu Laboratories Ltd., Inorganic material laboratories、3.Ramtron International Corporations)
