2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan
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International Conference on Solid State Devices and Materials
2002 International Conference on Solid State Devices and Materials

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜9月19日Nagoya Congress Center, Nagoya, Japan

[F-1-3]Single Electron Transistor with Ultra-High Coulomb Energy of 5000K using Position Controlled Grown Carbon Nanotube as Channel

Kazuhiko Matsumoto、Seizo Kinoshita、Kousuke Kurachi、Yoshitaka Gotoh、Yuji Awano(1.Advanced Industrial Science & Technology, CREST、2.Fujitsu Laboratory)
https://doi.org/10.7567/SSDM.2002.F-1-3
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