2004 International Conference on Solid State Devices and Materials
2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
[A-1-3]Suppression of Boron Penetration from S/D Extension to improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65nm node CMOS and beyond
T. Hayashi、T. Yamashita、K. Shiga、K. Hayashi、H. Oda、T. Eimori、M. Inuishi、Y. Ohji(1.Renesas Technology Corp., Wafer Process Engineering Development Dept.)
