2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan

[A-1-5]Strained-Si for CMOS 65nm node : Si0.8Ge0.2 SRB or “Low Cost” approach ?

F. Boeuf、F. Payet、N. Casanova、Y. Campidelli、N. Villani、O. Kermarrec、J.M. Hartmann、N. Emonet、F. Leverd、P. Morin、C. Perrot、V. Carron、C. Laviron、F. Arnaud、S. Jullian、D. Bensahel、T. Skotnicki(1.STMicroelectronics、2.CEA-LETI、3.Philips Semiconductors)
https://doi.org/10.7567/SSDM.2004.A-1-5
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