2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan

[A-10-2]A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits

Kazufumi Watanabe、Koji Kotani、Akinobu Teramoto、Shigetoshi Sugawa、Tadahiro Ohmi(1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University)
https://doi.org/10.7567/SSDM.2004.A-10-2
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