2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan

[A-2-1]Fully Silicided NiSi Gates on HfSiON Gate Dielectrics for Low Power Application

Kenzo Manabe、Kensuke Takahashi、Taeko Ikarashi、Ayuka Morioka、Heiji Watanabe、Takuya Yoshihara、Toru Tatsumi(1.System Devices Research Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.2004.A-2-1
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