2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan

[A-2-2]Weak Temperature Dependence of Non-Coulomb Scattering Component of HfAlOx-Limited Inversion Layer Mobility in n+poly-Si/HfAlOx/SiO2 n-MOSFETs

N. Yasuda、H. Hisamatsu、H. Ota、A. Toriumi(1.MIRAI-ASET、2.MIRAI-ASRC、3.Department of Materials Science, The University of Tokyo)
https://doi.org/10.7567/SSDM.2004.A-2-2
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