2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan

[A-2-3]High Mobility Dual Metal Gate MOS Transistors with High-k Gate Dielectrics

Kensuke Takahashi、Kenzo Manabe、Ayuka Morioka、Taeko Ikarashi、Takuya Yoshihara、Heiji Watanabe、Toru Tatsumi(1.System Devices Research. Laboratories, NEC Corporation)
https://doi.org/10.7567/SSDM.2004.A-2-3
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