2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan

[A-2-4]Temperature effects of constant bias stress on NFETs with Hf-based gate dielectric

Rino Choi、Byoung Hun Lee、Chadwin D. Young、Jang Hoan Sim、Gennadi Bersuker(1.International SEMATECH、2.IBM assignee)
https://doi.org/10.7567/SSDM.2004.A-2-4
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