2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan

[A-9-3]Quantitative Understanding of Mobility Degradation in High Effective Electric Field Region in MOSFETs with Ultra-thin Gate Oxides

Takamitsu Ishihara、Junji Koga、Shin-ichi Takagi(1.Advanced LSI Technology Laboratory, Research and Development Center, Toshiba Corporation、2.Department of Frontier Informatics, Graduate School of Frontier Science, The University of Tokyo)
https://doi.org/10.7567/SSDM.2004.A-9-3
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