2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan

[A-9-4]Determination of tunnel mass and thickness of gate oxide including poly-Si/SiO Si/SiO2 interfacial transition layers

Hiroshi Watanabe、Daisuke Matsushita、Kouichi Muraoka(1.Advanced LSI Technology Laboratory)
https://doi.org/10.7567/SSDM.2004.A-9-4
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