2004 International Conference on Solid State Devices and Materials
2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
2004 International Conference on Solid State Devices and Materials
2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
[B-1-2]Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
Ryosuke Iijima、Mariko Takayanagi、Takamitsu Ishihara、Takeshi Yamaguchi、Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation、2.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)
