2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan
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International Conference on Solid State Devices and Materials
2004 International Conference on Solid State Devices and Materials

2004 International Conference on Solid State Devices and Materials

2004年9月14日〜9月17日Tower Hall Funabori, Tokyo, Japan

[B-1-3]Nitrogen profile engineering in the interfacial SiON for HfAlOx gate dielectric

Riichiro Mitsuhashi、Kazuyoshi Torii、Hiroshi Ohji、Takaaki Kawahara、Atsushi Horiuchi、Hitoshi Takada、Masashi Takahashi、Hiroshi Kitajima(1.Semiconductor Leading Edge Technologies)
https://doi.org/10.7567/SSDM.2004.B-1-3
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