2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-1-2]The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT

M. Mizutani、T. Hayashi、M. Inoue、J. Yugami、K. Nomura、J. Tsuchimoto、Y. Ohno、M. Yoneda(1.Process Technology Development Div., RENESAS Technology Corp.、2.Wafer Process Engineering Dept.(1), RENESAS Semiconductor Engineering Corp.)
https://doi.org/10.7567/SSDM.2005.A-1-2
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