2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-1-3]Extendibility of High Mobility HfSiON Gate Dielectrics

Seiji Inumiya、Takayoshi Miura、Kiyoshi Shirai、Takeo Matsuki、Kazuyoshi Torii、Yasuo Nara(1.Semiconductor Leading Edge Technologies, Inc. (Selete)、2.Hitachi, Ltd., Central Research Laboratory)
https://doi.org/10.7567/SSDM.2005.A-1-3
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