2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-1-4]Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics

Ryosuke Iijima、Mariko Takayanagi、Takeshi Yamaguchi、Masato Koyama、Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation、2.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)
https://doi.org/10.7567/SSDM.2005.A-1-4
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