2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-1-5]Effects of Aluminum and Nitrogen Profile Control on Electrical Properties of HfAlON Gate Dielectric MOSFETs

Hiroyuki Ota、Arito Ogawa、Masaru Kadoshima、Kunihiko Iwamoto、Wataru Mizubayashi、Kenji Okada、Toshihide Nabatame、Hideki Satake、Akira Toriumi(1.MIRAI-ASRC, AIST、2.MIRAI-ASET, AIST、3.The University of Tokyo)
https://doi.org/10.7567/SSDM.2005.A-1-5
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