2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-2-1]Physical Origin of Fast Transient Charging in Hafnium Based Gate Dielectrics

B. H. Lee、R. Choi、S.C. Song、J. Sim、C.D. Young、G. Bersuker、H.K. Park、H. Hwang(1.SEMATECH、2.IBM assignee、3.Gwangju Institute of Science and Technology)
https://doi.org/10.7567/SSDM.2005.A-2-1
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