2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-2-3]Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON

Izumi Hirano、Takeshi Yamaguchi、Yuichiro Mitani、Ryosuke Iijima、Katsuyuki Sekine、Mariko Takayanagi、Kazuhiro Eguchi、Noburu Fukushima(1.Advanced LSI Technology Laboratory, Corporate R&D Center、2.Semiconductor Company, Toshiba Corporation)
https://doi.org/10.7567/SSDM.2005.A-2-3
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