2005 International Conference on Solid State Devices and Materials
2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
[A-2-5]Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
Yuuichi Kamimuta、Masato Koyama、Tsunehiro Ino、Katsuyuki Sekine、Motoyuki Sato、Kazuhiro Eguchi、Mariko Takayanagi、Mitsuhiro Tomita、Akira Nishiyama(1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation、2.Process & Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company、3.SoC Research & Development Center, Toshiba Corporation Semiconductor Company)
