2005 International Conference on Solid State Devices and Materials
2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
[A-2-6]Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
Motoyuki SATO、Tomonori AOYAMA、Katsuyuki SEKINE、Takeshi YAMAGUCHI、Izumi HIRANO、Kazuhiro EGUCHI、Yoshitaka TSUNASHIMA(1.Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation、2.Research & Development Center, Toshiba Corporation)
