2005 International Conference on Solid State Devices and Materials
2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
2005 International Conference on Solid State Devices and Materials
2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
[A-5-3]Importance of Leakage Current Noise Analysis for Accurate Lifetime Prediction of High-k Gate Dielectrics
Kenji OKADA、Hiroyuki OTA、Tsuyoshi HORIKAWA、Yasuyuki TAMURA、Takaoki SASAKI、Tomonori AOYAMA、Fumio OOTSUKA、Akira TORIUMI(1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.Department of Materials Science, The University of Tokyo、4.Semiconductor Leading Edge Technologies (Selete))
