2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-5-4]Reliable Extractions of EOT and Vfb in Poly-Si Gate High-k MISFETs through Advanced Modeling of Gate and Substrate Capacitances

N. Yasuda、H. Ota、T. Horikawa、T. Nabatame、H. Satake、A. Toriumi、Y. Tamura、T. Sasaki、F. Ootsuka(1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.University of Tokyo、4.Selete, AIST)
https://doi.org/10.7567/SSDM.2005.A-5-4
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