2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-7-2]Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process

Yoshinori Tsuchiya、Masato Koyama、Junji Koga、Akira Nishiyama(1.Advanced LSI Technology Laboratory, Toshiba Corp.)
https://doi.org/10.7567/SSDM.2005.A-7-2
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