2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-8-1]MoXSiYNZ Metal Gate Electrode with Tunable Work Function for Advanced CMOS

P. Zhao、J. Kim、M. J. Kim、B. E. Gnade、R. M. Wallace(1.Dept. of Electrical Engineering, University of Texas at Dallas、2.School of Advanced Materials Eng., Kookmin University)
https://doi.org/10.7567/SSDM.2005.A-8-1
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