2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-8-3]Gate Depletion Effect Reduction and Flat-band Voltage Control in Poly-Si/HfAlOx MOSFETs with Nanometer TaN Dots at the Top Interface

Hideaki Fujiwara、Masaru Kadoshima、Hiroyuki Ota、Hiroyuki Takaba、Nobuyuki Mise、Hideki Satake、Toshihide Nabatame、Akira Toriumi(1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.The Univ. of Tokyo)
https://doi.org/10.7567/SSDM.2005.A-8-3
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