[A-9-3]First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO2 interfaces
T. Nakaoka、K. Shiraishi、Y. Akasaka、T. Chikyow、K. Yamada、Y. Nara(1.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba、2.National Institute for Materials Science、3.Semiconductor Leading Edge Technology Inc.、4.Nanotechnology Research Laboratories, Waseda University)
