2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[A-9-3]First-principles studies on metal induced gap states (MIGS) at metal/high-k HfO2 interfaces

T. Nakaoka、K. Shiraishi、Y. Akasaka、T. Chikyow、K. Yamada、Y. Nara(1.Graduate School of Pure and Applied Sciences, Univ. of Tsukuba、2.National Institute for Materials Science、3.Semiconductor Leading Edge Technology Inc.、4.Nanotechnology Research Laboratories, Waseda University)
https://doi.org/10.7567/SSDM.2005.A-9-3