2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[B-1-5]Performance Enhancement under High-Temperature Operation and Physical Origin of Mobility Characteristics in Ge-rich strained SiGe-on-Insulator pMOSFETs

Tsutomu Tezuka、Shu Nakaharai、Yoshihiko Moriyama、Norio Hirashita、Naoharu Sugiyama、Akihito Tanabe、Koji Usuda、Shin-ichi Takagi(1.MIRAI-ASET、2.MIRAI-AIST、3.The University of Tokyo)
https://doi.org/10.7567/SSDM.2005.B-1-5
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