2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[B-2-6L]Fully-depleted ultra narrow (-10 nm) body Gate-All-Around CMOS transistors

Navab Singh、A. Agarwal、L. K. Bera、W.W. Fang、R. Kumar、G. Q. Lo、N. Balasubramanian、D. L. Kwong(1.Institute of Microelectronics、2.National University of Singapore.)
https://doi.org/10.7567/SSDM.2005.B-2-6L
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