2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
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International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[B-3-1]Impact of The Improved High Performance Si(110) Oriented MOSFETs by Using Accumulation-Mode Fully Depleted SOI Devices

Cheng Weitao、Akinobu Teramoto、Masaki Hirayama、Shigetoshi Sugawa、Tadahiro Ohmi(1.Graduate School of Engineering, Tohoku University、2.New Industry Creation Hatchery Center, Tohoku University.)
https://doi.org/10.7567/SSDM.2005.B-3-1
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