2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan
戻る
International Conference on Solid State Devices and Materials
2005 International Conference on Solid State Devices and Materials

2005 International Conference on Solid State Devices and Materials

2005年9月12日〜9月15日International Conference Center Kobe, Kobe, Japan

[B-3-3]Device Design of High-Speed Source-Heterojunction-MOS-Transistors (SHOT) under 10-nm Regime

Tomohisa Mizuno、Shinichi Takagi(1.MIRAI-AIST、2.Kanagawa University、3.The University of Tokyo)
https://doi.org/10.7567/SSDM.2005.B-3-3
PDFダウンロードPDFダウンロード
戻る