2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[A-1-3]Counter-doping as a solution for multi threshold voltage on FDSOI MOSFETs with a single TiN/HfO2 gate stack

C. Buj-Dufournet1、F. Andrieu1、O. Faynot1、O. Weber1、F. Allain1、L. Tosti1、C. Fenouillet-Béranger1、D. Lafond1、S. Deleonibus1(1.CEA-LETI/MINATEC)
https://doi.org/10.7567/SSDM.2009.A-1-3
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