2009 International Conference on Solid State Devices and Materials
2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
2009 International Conference on Solid State Devices and Materials
2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
[A-1-6]Channel-Proximate Silicon-Carbon Source/Drain Stressors for Performance Boost in Strained N-Channel Field-Effect Transistors
S. M. Koh1、C. M. Ng2、Z. Y. Zhao3、H. Maynard3、N. Variam3、T. Henry3、Y. Erokhin3、G. Samudra1、Y. C. Yeo1(1.National Univ. of Singapore(Singapore)、2.Chartered Semiconductor Manufacturing Ltd.(Singapore)、3.Varian Semiconductor(USA))
