2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[A-2-2]Temperature Coefficient of Threshold Voltage in Metal/High-k Gate Transistors with Various Thickness of TiN and Capping Layers

Y. Nishida1,2、K. Eikyu1、A. Shimizu1、T. Yamashita1、H. Oda1、Y. Inoue1、K. Shibahara2(1.Renesas Tech. Corp.(Japan)、2.Hiroshima Univ.(Japan))
https://doi.org/10.7567/SSDM.2009.A-2-2
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