2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[A-3-1]Carbon Incorporation into Substitutional Silicon Site by Molecular Carbon Ion Implantation and Recrystallization Annealing for Stress Technique in nMOSFETs

H. Itokawa1、K. Miyano1、Y. Oshima1、I. Mizushima1、K. Suguro1(1.Toshiba Corp.)
https://doi.org/10.7567/SSDM.2009.A-3-1
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