2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[A-3-2]Influence of Carbon in in-situ Carbon Doped SiGe (SiGe:C) Films on Si (001) Substrates on Epitaxial Growth Characteristics

H. Oomae1、H. Itokawa2、I. Mizushima2、S. Nakamura3、N. Uchitomi1(1.Nagaoka Univ. of Tech.(Japan)、2.Toshiba Corp.(Japan)、3.Aoyama Gakuin Univ.(Japan))
https://doi.org/10.7567/SSDM.2009.A-3-2
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