2009 International Conference on Solid State Devices and Materials
2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
2009 International Conference on Solid State Devices and Materials
2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
[A-3-3]Carbon Profile Engineering for Silicon-Carbon Source/Drain Stressor Formed by Carbon Ion Implantation and Solid Phase Epitaxy
Q. Zhou1、S. M. Koh1、Z. Y. Zhao2、T. Toh2、H. Maynard2、N. Variam2、T. Henry2、Y. Erokhin2、Y. C. Yeo1(1.National Univ. of Singapore(Singapore)、2.Varian Semiconductor(USA))
