2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
戻る
International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[A-3-4]Contribution of Carbon to Activation and Diffusion of Boron in Silicon

H. Itokawa1、Y. Agatsuma2、N. Aoki1、N. Uchitomi2、I. Mizushima1(1.Toshiba Corp.(Japan)、2.Nagaoka Univ. of Tech.(Japan))
https://doi.org/10.7567/SSDM.2009.A-3-4
PDFダウンロードPDFダウンロード
戻る