2009 International Conference on Solid State Devices and Materials
2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
2009 International Conference on Solid State Devices and Materials
2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
[A-3-5L]Stress variability control by defects suppression of SiGe Source/Drain using novel SiGe epitaxial growth technique
M. Fukuda1、Y. Shimamune1、M. Nakamura1、K. Tanahashi1、T. Miyashita1、M. Nishikawa1、N. Tamura1、T. Mori1、Y. Nara1、M. Kase1(1.Fujitsu Microelectronics Ltd.)
