2009 International Conference on Solid State Devices and Materials
2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
2009 International Conference on Solid State Devices and Materials
2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
[A-4-2]Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors using Ion Implantation Induced Relaxation Technique of Strained-Substrates
T. Mizuno1,2、N. Mizoguchi1、K. Tanimoto1、T. Yamauchi1、T. Tezuka3、T. Sameshima4(1.Kanagawa Univ.(Japan)、2.MIRAI-NIRC(Japan)、3.MIRAI-Toshiba(Japan)、4.Tokyo Univ. of Agri. And Tech.(Japan))
