2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[A-5-1]NiSi metal S/D transistors with ultimaltely low Schottky barrier by sulfur Implantation After Silicidation Process

Y. Nishi1、A. Kinoshita1(1.Toshiba Corp.)
https://doi.org/10.7567/SSDM.2009.A-5-1
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