2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[B-2-1]Thermally stable Ni-silicide gate electrode with TiN barrier metal for NAND flash memory application with 24 nm technology and beyond

S. J. Whang1、M. S. Joo1、B. M. Seo1、K. E. Chang1、W. K. Kim1、T. W. Jung1、G. H. Kim1、J. Y. Lim1、K. Y. Kim1、K. Hong1、S. K. Park1(1.Hynix Semiconductor Inc.)
https://doi.org/10.7567/SSDM.2009.B-2-1
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