2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[B-2-2]Lanthanoid Metal Oxide MIM Capacitors for Precision Analog Circuits: Material Screening, Process Development, and Characterization

J. D. Chen1、J. J. Yang1、R. Wise2、P. Steinmann2、C. Zhu1、Y. C. Yeo1(1.National Univ. of Singapore(Singapore)、2.Texas Instruments Inc.(USA))
https://doi.org/10.7567/SSDM.2009.B-2-2