2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[B-2-4]New Criteria for Suppressing Extrinsic Defect Generation in Ultra Thin SiON Gate Insulator (EOT<1.4nm) for Advanced CMOSFETs

S. Shimamoto1、H. Kawashima2、T. Kikuchi1、Y. Yamaguchi2、A. Hiraiwa2(1.Hitachi, Ltd.(Japan)、2.Renesas Tech. Corp.(Japan))
https://doi.org/10.7567/SSDM.2009.B-2-4
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