2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan
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International Conference on Solid State Devices and Materials
2009 International Conference on Solid State Devices and Materials

2009 International Conference on Solid State Devices and Materials

2009年10月6日〜10月9日Sendai Kokusai Hotel, Miyagi, Japan

[B-5-1]Channel Strain Analysis in High Performance Damascene-gate pMOSFETs by High Spatial Resolution Raman Spectroscopy

M. Takei1、D. Kosemura1、K. Nagata1、H. Akamatsu1、S. Mayuzumi1,2、S. Yamakawa2、H. Wakabayashi2、A. Ogura1(1.Meiji Univ.(Japan)、2.Sony Corp.(Japan))
https://doi.org/10.7567/SSDM.2009.B-5-1
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